ST5000E測(cè)試系統(tǒng)是一項(xiàng)高速多用途半導(dǎo)體分立器件智能測(cè)試系統(tǒng)。它具有十分豐富的編程軟件和強(qiáng)大的測(cè)試能力??烧鎸?shí)準(zhǔn)確測(cè)試達(dá)十九大類二十七分類大、中、小功率的半導(dǎo)體分立器件。STI產(chǎn)品使用比較方便,只需要通過(guò)USB或者232與電腦連接,通過(guò)電腦中友好的人機(jī)界面操作,即可完成測(cè)試。并可以實(shí)現(xiàn)測(cè)試數(shù)據(jù)以EXCEL的格式保存,特性曲線保存相當(dāng)方便。如圖所示,
測(cè)試范圍:
技術(shù)參數(shù)及可實(shí)現(xiàn)目標(biāo)
套件:
測(cè)試陣列器件,Multiple及達(dá)林頓陣列的掃描器(1200V,30A),遙控器,光電器件適配器,繼電器適配器,
各種測(cè)試夾具: TO-220/218,TO-3/66,TO-5/18/72/92,TO-247, SOT-23/25/26/223, D-PAK,SMA/B/C,,空白插座等等
1.MOSFET測(cè)試項(xiàng)目:IDSS/V,IFSSF,IGSSR,BVDSS,VGSTH,
GFS,VDSON,VSD,RDSON,IDON,VGSON
2.IGBT 測(cè)試項(xiàng)目:ICES,IGESF,IGESR,BVCES,VGETH,GFE
VCESAT,ICON,RDSON,VGEON,VF
3.普通晶體管測(cè)試項(xiàng)目: IEBO,ICBO,ICEO/R/S/V,BVCBO,
BVEBO,BVCEO,VCESUS,hFE,VCESAT,VBESAT,VBEON
4.可控硅SCR測(cè)試項(xiàng)目:IDRM, IRRM, IGKO,VDRM, VRRM,
BVGKO, VTM, IGT, VGT, IL, IH
CURVE TRACER:
MOSFET | SIDAC | |||
| ID vs VDS | IT vs VT+ | ||
| ID vs VGS |
| IT vs VT- | |
| IS vs VSD |
|
| |
| RDSON vs ID | DIAC | ||
| RDSON vs VG |
| IT vs VT+ | |
| IDSS vs VDS |
| IT vs VT- | |
|
| |||
TRANSISTOR | SSOVP | |||
| HFE vs IC |
| IT vs VT+ | |
| IC vs VCE |
| IT vs VT- | |
| VBESAT vs IC |
|
| |
| BVEBO vs IE | |||
| ICBO vs VCB | |||
| VBE vs IC | |||
VCESAT vs IB | ||||
BVCE vs IC | ||||
IGBT | ||||
ICES vs VCE | ||||
IC vs VCE | ||||
IC vs VGE | ||||
JFET | ||||
IDOFF vs VDS | ||||
IDOFF vs VGS | ||||
IDON vs VDS | ||||
IDON vs VGS | ||||
ZENER | ||||
IF vs VF | ||||
IR vs VR | ||||
IZ vs BVZ | ||||
DIODE | ||||
IF vs VF | ||||
IR vs VR | ||||
SCR | ||||
IT vs VTM |
主要型號(hào):
ST1005E 1000V 50A;
ST2005E 2000V 50A;
ST2010E 2000V 100A;