InGaAs APD光電探測(cè)器產(chǎn)品有3個(gè)系列:Deschutes FSI™, Deschutes BSI™, and Siletz™ series。
Deschutes FSI™是前照式,而Deschutes BSI™和 Siletz™系列為背照式。FSI 和BSI 的區(qū)別主要是FSI系列產(chǎn)品吸收低于950nm以下波長,如果應(yīng)用在950nm以上那么BSI系列APD產(chǎn)品提供更高的響應(yīng)率。
InGaAs APD光電探測(cè)器3個(gè)APD區(qū)別:
|
| FSI™ | BSI™ | Siletz™ |
Spectral Range λ | Min suggested Typical range Max suggested | <800 nm 800-1550nm 1750nm | 900nm 1064-1550nm 1700nm | 950nm 1064-1550nm 1700nm |
Operating Gain, M | Min Typical range Max | 1 5-20 20 | 1 5-20 20 | 1 5-40 50 |
Responsivity atM=10,(A/W) | @1550nm @1064nm | 7.2 6.8 | 10.1 7.3 | 10.1 7.3 |
Excess Noise Factor, F(M,k) | Keffective (1) M=10 M=15 M=20 M=50 M=1000 | ~0.2 3.4 4.3 5.2 - - | ~0.2 3.4 4.3 5.2 - - | ~0.02 2.0 2.2 2.3 3 - |
Dark Current at
| M=1 of 75-um APD, [nA] | 0.56(2) | 1.9(2) | 23.4(2) |
Capacitance of 75-μm APD | [fF] | 450 | 540 | 350 |