描述:
The FL4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook com
puter power management and other battery powered circuits where high-side
switching.
特點(diǎn):
●-30V/-5.2A,
RDS(ON)<60mΩ(typ)@VGS=-10V
●-30V/-4.5A,
RDS(ON)<90mΩ(typ)@VGS=-4.5V
●Super High Dense Cell Design for Extremely Low Rds(on)
●Exceptional on-resistance and maximum DC current capability
●Full RoHS compliance
●SOP-8 package design
應(yīng)用:
●Power Management in Note book
●Portable Equipment
●Battery Powered System
●DC/DC Converter
●Load Switch
●DSC
●LCD Display inverter